SR Rectification application
For the current rectifying device of the MosFET, there are generally conduction, driving, and switching losses. Its loss characteristics can be represented by Rds(On). Therefore, there is a great limitation in improving the efficiency of the MOSFET: a compromise must be made between the on-resistance and the lower gate charge (Qg), that is, a compromise between conduction loss and capacitive loss. PIC products will reduce Rds(On) value, optimizing the various factors of the rectifier device to improve circuit efficiency
SR Application Recommended Device
Function | Spec. | Package Type | Recommended Parts |
---|---|---|---|
Low Voltage MosFET | N-CH 40V 1.8mOhm | DFN5X6A-EP1 | PAN40S48Y |
N-CH 60V 4.8mOhm | DFN5X6A-EP1 | PAN60T24AY | |
N-CH 80V 6.5mOhm | DFN5X6A-EP1 | PAN80T24AY | |
N-CH 100V 10mOhm | DFN5X6A-EP1 | PAN00T24AY | |
N-CH 40V 3.3mOhm | TO-220 | PAN40T24AG | |
N-CH 60V 4.8mOhm | TO-220 | PAN60T24AG | |
N-CH 80V 6.5mOhm | TO-220 | PAN80T24AG | |
N-CH 100V 10mOhm | TO-220 | PAN00T24AG |