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N-Channel MOSFET, 220A, 40V, DFN5X6A-EP1 Package
2022/5/13
The PAN40SY86Y N-Channel enhancement mode power Field effect transistors are using Split Gate Trench(SGT) Technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy. It is widely usded in DC-DC application due to the high efficiency and power density. | Part Number | PAN40SY86Y |
| Type | 40V N-Channel Power MOSFET |
| BVDSS | 40V |
| RDSON | 1.0mΩ |
| ID | 220A |
| FEATURES | ● Super Low Gate Charge ● 100% EAS Guaranteed ● Green Device Available ● Excellent CdV/dt effect decline ● Advanced high cell density SGT technology |
| APPLICATIONS | ● DC/DC Primary Side Switch ● Industrial Synchronous ● DC/DC Converter ● SMPS Synchronous Rectification |
| Package | DFN5X6A-EP1 |
| Status | Active |
| Documents | Datasheet |